DMP2160U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(ON) max
75m ? @ V GS = -4.5V
140m ? @ V GS = -1.8V
I D max
T A = +25°C
-3.3A
-2.4A
?
?
?
?
?
?
Low On-Resistance
Very Low Gate Threshold Voltage V GS(th) ≤ 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q 101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
?
?
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
?
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
SOT23
?
?
?
?
Drain
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
D
Gate
Source
G
S
Top View
Ordering Information (Note 4)
Part Number
DMP2160U-7
Internal Schematic
Case
SOT23
Top View
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
DMF
DMF = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y ? M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y ? = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Shanghai A/T Site
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2160U
Document number: DS31586 Rev. 8 - 2
1 of 5
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料
DMP2160UW-7 MOSFET P-CH 20V 1.5A SOT-323
DMP21D0UFB4-7B MOSF P CH 20V 770MA DFN1006H4-3
DMP21D0UFD-7 MOS P CH 20V 1.14A X1-DFN1212-3
DMP21D0UT-7 MOSFET P CH 20V 590A SOT523
DMP21D5UFB4-7B MOSF P CH 20V 700MA X2-DFN1006-3
DMP2215L-7 MOSFET P-CH 20V 2.7A SOT23-3
DMP2225L-7 MOSFET P-CH 20V 2.6A SOT23-3
DMP2240UDM-7 MOSFET P-CH DUAL 20V 2A SOT-26
相关代理商/技术参数
DMP2160UFDB 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2160UFDB-7 功能描述:MOSFET 20V 3.8A DUAL P-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2160UW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2160UW-7 功能描述:MOSFET SINGLE P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D0UFB 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP21D0UFB4 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP21D0UFB4-7B 功能描述:MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D0UFB-7 功能描述:MOSFET MOSFET P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube